DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply

FEATURES
40V/35A, RDS(ON) =9mΩ @ VGS = 10V
Improved dv/dt capability
Fast switching
PPAK3x3 package design

APPLICATIONS
Notebook
LED Application
Load switch
Hand-Held Device