DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATURES
-60V/-50A, RDS(ON) = 22mΩ @ VGS = -10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
TO-252 package design

APPLICATIONS
Networking
LED Applications
Load Switch