MTDP6966A 60V N- Channel MOSFETs
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
60V/70A, RDS(ON) =8.2mΩ @ VGS = 10V
Improved dv/dt capability
100% EAS Guaranteed
TO-220 package design