DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATURES

20V/8A,RDS(ON) =22mΩ@VGS =4.5V
G-S ESD Diode Embedded
Fast switching
100% EAS Guaranteed
Green Device Available
SOP-8 package design

APPLICATIONS
MB/VGA/Vcore
POL Applications
SMPS 2nd SR