DESCRIPTION
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance ,provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATURES
60V/19A, RDS(ON) = 30mΩ @ VGS = 10V
-60V/-17A, RDS(ON) = 48mΩ @ VGS = -10V
Fast switching
Suit for 4.5V Gate Drive Applications
TO-252-4L package design

APPLICATIONS
Networking
Motor Drive Applications
DC FAN
Half / Full Bridge Topology